JPH0456303B2 - - Google Patents

Info

Publication number
JPH0456303B2
JPH0456303B2 JP58112094A JP11209483A JPH0456303B2 JP H0456303 B2 JPH0456303 B2 JP H0456303B2 JP 58112094 A JP58112094 A JP 58112094A JP 11209483 A JP11209483 A JP 11209483A JP H0456303 B2 JPH0456303 B2 JP H0456303B2
Authority
JP
Japan
Prior art keywords
layer
resistance
latent image
electrostatic latent
image carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58112094A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6011849A (ja
Inventor
Koji Minami
Kazuyuki Goto
Hisao Haku
Takeo Fukatsu
Michitoshi Oonishi
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58112094A priority Critical patent/JPS6011849A/ja
Priority to US06/621,087 priority patent/US4568622A/en
Publication of JPS6011849A publication Critical patent/JPS6011849A/ja
Priority to US06/820,985 priority patent/US4670367A/en
Publication of JPH0456303B2 publication Critical patent/JPH0456303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP58112094A 1983-06-21 1983-06-21 静電潜像担持体 Granted JPS6011849A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58112094A JPS6011849A (ja) 1983-06-21 1983-06-21 静電潜像担持体
US06/621,087 US4568622A (en) 1983-06-21 1984-06-15 Electrophotographic photosensitive member and method for making such a member containing amorphous silicon
US06/820,985 US4670367A (en) 1983-06-21 1986-01-21 Electrophotographic photosensitive member and method for making such a member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112094A JPS6011849A (ja) 1983-06-21 1983-06-21 静電潜像担持体

Publications (2)

Publication Number Publication Date
JPS6011849A JPS6011849A (ja) 1985-01-22
JPH0456303B2 true JPH0456303B2 (en]) 1992-09-08

Family

ID=14577962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112094A Granted JPS6011849A (ja) 1983-06-21 1983-06-21 静電潜像担持体

Country Status (2)

Country Link
US (2) US4568622A (en])
JP (1) JPS6011849A (en])

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0789232B2 (ja) * 1985-05-17 1995-09-27 株式会社リコー 電子写真感光体
JPH0785173B2 (ja) * 1985-12-27 1995-09-13 キヤノン株式会社 光受容部材
JP2524107B2 (ja) * 1986-01-18 1996-08-14 キヤノン株式会社 超薄膜積層横造層を有する光受容部材
JPS6364054A (ja) * 1986-09-05 1988-03-22 Sanyo Electric Co Ltd 静電潜像担持体
JP2524106B2 (ja) * 1986-01-18 1996-08-14 キヤノン株式会社 超薄膜積層構造層を有する光受容部材
US4885226A (en) * 1986-01-18 1989-12-05 Sanyo Electric Co., Ltd. Electrophotographic photosensitive sensor
JPH0785171B2 (ja) * 1986-01-22 1995-09-13 キヤノン株式会社 超薄膜積層構造を有する光受容部材
JPH0785175B2 (ja) * 1986-01-22 1995-09-13 キヤノン株式会社 超薄膜積層構造を有する光受容部材
JP2572574B2 (ja) * 1986-06-23 1997-01-16 キヤノン株式会社 超薄膜積層構造層を有する光受容部材
JPS6468010A (en) * 1987-09-08 1989-03-14 Matsushita Electric Ind Co Ltd Correcting circuit
JPH02211709A (ja) * 1989-02-10 1990-08-23 Matsushita Electric Ind Co Ltd 減衰装置
JPH04332215A (ja) * 1991-05-08 1992-11-19 Matsushita Electric Ind Co Ltd オフセット除去装置
US6974629B1 (en) * 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
US6660365B1 (en) 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6964731B1 (en) * 1998-12-21 2005-11-15 Cardinal Cg Company Soil-resistant coating for glass surfaces
CA2373441C (en) 1999-05-18 2007-11-13 Cardinal Ig Company Hard, scratch-resistant coatings for substrates
EP1713736B1 (en) * 2003-12-22 2016-04-27 Cardinal CG Company Graded photocatalytic coatings and methods of making such coatings
JP2008505841A (ja) * 2004-07-12 2008-02-28 日本板硝子株式会社 低保守コーティング
US8092660B2 (en) * 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) * 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US7989094B2 (en) * 2006-04-19 2011-08-02 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
TW200802858A (en) * 2006-06-26 2008-01-01 Tatung Co Ltd Structure of semiconductor with low heat carrier effect
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
JP5474796B2 (ja) * 2007-09-14 2014-04-16 日本板硝子株式会社 低保守コーティングおよび低保守コーティングの製造方法
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484809B1 (en) * 1977-12-05 1995-04-18 Plasma Physics Corp Glow discharge method and apparatus and photoreceptor devices made therewith
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS57105745A (en) * 1980-12-23 1982-07-01 Canon Inc Photoconductive member
JPS57115551A (en) * 1981-01-09 1982-07-19 Canon Inc Photoconductive material
US4409311A (en) * 1981-03-25 1983-10-11 Minolta Camera Kabushiki Kaisha Photosensitive member
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant

Also Published As

Publication number Publication date
JPS6011849A (ja) 1985-01-22
US4670367A (en) 1987-06-02
US4568622A (en) 1986-02-04

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